Quantum dots are a perspective material for creation of optoelectronic devices including light emitting structures. The application of mono-or bilayer of QD is more efficient method than using bulk layers of QD. The main disadvantage of quantum dots creation method is an excess of organic molecules in the structure. One of the way that allows remove this excess is a thermal treatment of structures. However, a thermal treatment has an effect on structure and, consequently, on optical properties. The alteration of fluorescence intensity of thin film incorporating quantum dots (QD) was studied. The films incorporating QDs were formed with Langmuir-Schaefer technique. Films were annealed under the oxygen atmosphere and temperature of 300, 400, 500, and 600 degrees C for 10 min. The decrease of fluorescence intensity and shifting of fluorescence peak were observed. It is related to oxidation process of quantum dots structure and partial depassivation of electron states of external shell of a quantum dot.
