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    Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films

    Year: 2022

    Journal: Membranes, Volume 12, JUL

    Authors: Pan, Yaru; Liang, Xihui; Liang, Zhihao; Yao, Rihui; Ning, Honglong; Zhong, Jinyao; Chen, Nanhong; Qiu, Tian; Wei, Xiaoqin; Peng, Junbiao

    Organizations: National Key R&D Programof China [2021YFB3600604]; GDAS Project of Science and Technology Development [2019GDASYL-0103072]; Southwest Institute of Technology and Engineering Cooperation Fund [HDHDW5902020402]; KeyArea Research and Development Program of Guangdong Province [2020B010183002]; Special Fund for Science and Technology Innovation Strategy of Guangdong Province in 2021 (Big Special Project + Task List) Project [210908174533730]; National Natural Science Foundation of China [62174057, 62074059, 22090024]; Ji Hua Laboratory scientific research project [X190221TF191]

    Keywords: zirconium-yttrium-magnesium-aluminum-hafnium-oxide; dielectric layer; metal oxide film; solution method

    Capacitors play an increasingly important role in hybrid integrated circuits, while the MIM capacitors with high capacitance density and small thickness can meet the needs of high integration. Generally speaking, the films prepared with a single metal oxide dielectric often achieve a breakthrough in one aspect of performance, but dielectric layers are required to be improved to get better performance in leakage current, capacitance density, and transmittance simultaneously in modern electronic devices. Therefore, we optimized the performance of the dielectric layers by using multiple metal oxides. We combined zirconia, yttria, magnesium oxide, alumina, and hafnium oxide with the solution method to find the best combination of these five metal oxides. The physical properties of the multi-component films were measured by atomic force microscopy (AFM), ultraviolet-visible spectrophotometer, and other instruments. The results show that the films prepared by multi-component metal oxides have good transmittance and low roughness. The thicknesses of all films in our experiment are less than 100 nm. Then, metal-insulator-metal (MIM) devices were fabricated. In addition, we characterized the electrical properties of MIM devices. We find that multi-component oxide films can achieve good performances in several aspects. The aluminum-magnesium-yttrium-zirconium-oxide (AMYZO(x)) group of 0.6 M has the lowest leakage current density, which is 5.03 x 10(-8) A/cm(2) @ 1.0 MV/cm. The hafnium-magnesium-yttrium-zirconium-oxide (HMYZO(x)) group of 0.8 M has a maximum capacitance density of 208 nF/cm(2). The films with a small thickness and a high capacitance density are very conducive to high integration. Therefore, we believe that multi-component films have potential in the process of dielectric layers and great application prospects in highly integrated electronic devices.
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