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    Collapse Mechanism in Few-Layer MoS2 Langmuir Films

    Year: 2020

    Journal: J. Phys. Chem. C, Volume 124, JUL 23, page 15856–15861

    Authors: Bodik, M; Demydenko, M; Shabelnyk, T; Halahovets, Y; Kotlar, M; Kostiuk, D; Shaji, A; Brunova, A; Veis, P; Jergel, M; Majkova, E; Siffalovic, P

    Organizations: Slovak Grant Agency for ScienceVedecka grantova agentura MSVVaS SR a SAV (VEGA) [VEGA 2/0092/18]; Research & Innovation Operational Programme [313021T081]; ERDFEuropean Commission; [APVV-14-0745]; [APVV-15-0641]; [APVV-15-0693]; [APVV-16-0319]; [APVV-17-0560]; [APVV SK-CN-RD-18-0006]

    Recent advances in the liquid-phase exfoliation enabled large-scale production of two-dimensional (2D) materials, including few-layer graphene and transition metal dichalcogenides. The exfoliated flakes of 2D materials allow cost-effective deposition of continuous films for various applications ranging from optoelectronics to lubrication technology. The self-assembly of 2D materials on water subphase and subsequent transfer of such a Langmuir film onto a solid substrate offers an unprecedented layer quality in terms of spatial homogeneity as it proceeds in thermodynamic equilibrium. However, while the formation of conventional organic molecular Langmuir films has been widely studied, the application of the Langmuir technique to rigid inorganic 2D materials is still rather unexplored. Here, we study the underlying mechanism behind the formation and collapse at the critical surface pressure of the Langmuir film composed of few-layer MoS2 flakes. The in situ wide-angle X-ray scattering measured in real time and other supportive techniques applied ex situ after the film transfer onto a Si/SiO2 substrate were employed. We identify all principal compression stages up to the Langmuir monolayer collapse and beyond, relying on the texture, surface pressure, and elastic modulus temporal evolution. The results obtained and the conclusions drawn can be extended to a large family of the inorganic Langmuir films of other 2D materials to optimize the deposition process for envisaged application.
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