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    Preparation and Characterization of a Novel Organic Semiconductor Indacenedithiophene Derivative and the Corresponding Langmuir-Blodgett Thin Films

    Year: 2019

    Journal: J. Nanosci. Nanotechnol., Volume 19, NOV, page 7244–7250

    Authors: Alvarez-Venicio, Violeta; Arcos-Ramos, Rafael O.; Alfonso Hernandez-Rojas, Jose; Octavio Guerra-Pulido, Jaime; Basiuk, Vladimir A.; Rivera, Margarita; del Pilar Carreon-Castro, Maria

    Organizations: Catedras-CONACYT project [411-2016]; DGAPA-UNAMUniversidad Nacional Autonoma de Mexico [IN-206018, IN116716]

    Keywords: IDT-DPA; Langmuir-Blodgett Thin Films; Organic Semiconductors; DFT; AFM; SEM

    The synthesis of a novel indacenedithiophene derivative (IDT-DPA) is described, which exhibits semiconducting behavior. Its properties were measured by means of UV-visible and fluorescence spectroscopies using toluene as solvent. An extinction molar coefficient of 2.05 x 10(4) M-1 cm(-1) and a Stokes shift of 50 nm were obtained. A theoretical study was performed using the density functional theory, from which HOMO-LUMO band gap of 1.711 eV was calculated. IDT-DPA was deposited on the water-air interface to form Langmuir monolayers. pi-A curves and hysteresis were measured showing reversibility behavior. The monolayers were transferred to glass substrates as Langmuir-Blodgett thin films. Their morphological properties were characterized by using scanning electron and atomic force microscopy, which showed that the films tend to form clusters with a homogeneous distribution. Absorption and emission spectra of the films were measured, from which the optical band gap and Stocks shift were derived. Based on the electronic properties and light emission spectra of IDT-DPA, this compound can be proposed for the applications in organic light-emitting diodes and other organic semiconductor devices.
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