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    The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

    Year: 2019

    Journal: Coatings, Volume 9, JUL

    Authors: Zhang, Jingying; Fu, Xiao; Zhou, Shangxiong; Ning, Honglong; Wang, Yiping; Guo, Dong; Cai, Wei; Liang, Zhihao; Yao, Rihui; Peng, Junbiao

    Organizations: National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [51771074]; Guangdong Science and Technology Project [2016B090907001]; 2019 Guangdong University Student Science and Technology Innovation Special Fund ("Climbing Plan" Special Fund) [pdjh2019a0028, pdjh2019b0041]; National College Students' Innovation and Entrepreneurship Training Program [201910561005]; South China University of Technology 100 Step Ladder Climbing Plan Research Project [j2tw201902475]; Fundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central Universities

    Keywords: solution process; indium oxide; zirconium doping; oxygen vacancies

    Solution-processed indium oxide is an ideal transparent semiconductor material with wide band gap. Zirconium is an element characterized by a strong binding ability to oxygen which can inhibit the formation of oxygen vacancies and reduce the surface defect state. In this paper, zirconium doped indium oxide (InxZryO) thin films were prepared by the solution method, with indium oxide being doped with zirconium in order to tune the relative number of oxygen vacancies. The influence of the Zr doping concentration and the post-annealed temperature on the properties of the InxZryO thin films was investigated. The results show that the doping process improves the crystallinity and relative density of the obtained films. A novel nondestructive method named microwave photoconductivity decay (mu-PCD) was used to evaluate the quality of InxZryO thin films by simply measuring their response under laser irradiation. The relative number of oxygen vacancies and the minority carrier concentration achieved minimum values at 10 at.% Zr doping concentration. Furthermore, InxZryO thin films with optimal properties from an electrical point of view were obtained at 10 at.% Zr doping concentration, annealed at 400 degrees C. Characterized by an average transmittance above 90% in the visible range, the obtained InxZryO thin films can be used as active layer materials in the fabrication of high-performance thin film transistor (TFT) devices.
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