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    Activating Carrier Multiplication in PbSe Quantum Dot Solids by Infilling with Atomic Layer Deposition

    Year: 2013

    Journal: JOURNAL OF PHYSICAL CHEMISTRY LETTERS, Vol. 4, p 1766-1770, 20150703

    Authors: ten Cate, Sybren; Liu, Yao; Sandeep, C. S. Suchand; Kinge, Sachin; Houtepen, Arjan J.; Savenije, Tom J.; Schins, Juleon M.; Law, Matt; Siebbeles, Laurens D. A.

    Organizations: Delft Univ Technol, Dept Chem Engn, Optoelect Mat Sect, NL-2628 BL Delft, Netherlands; Univ Calif Irvine, Dept Chem, Irvine, CA 92697 USA; Toyota Europe, Mat Res & Dev, B-1930 Zaventem, Belgium

    Carrier multiplication-the generation of multiple electron-hole pairs by a single photon-is currently of great interest for the development of highly efficient photovoltaics. We study the effects of infilling PbSe quantum-dot solids with metal oxides by atomic layer deposition on carrier multiplication. Using time-resolved microwave conductivity measurements, we find, for the first time, that carrier multiplication occurs in 1,2-ethanedithiol-linked PbSe quantum-dot solids infilled with Al2O3 or Al2O3/ZnO, while it is negligible or absent in noninfilled films. The carrier-multiplication efficiency of the infilled quantum-dot solids is close to that of solution-dispersed PbSe quantum dots, and not significantly limited by Auger recombination.