Contact
    Start Publications All Inkjet-Printed Metal-Oxide Thin-Film Transistor Array with ...
    ←  Publication Finder
    Attension

    All Inkjet-Printed Metal-Oxide Thin-Film Transistor Array with Good Stability and Uniformity Using Surface-Energy Patterns

    Year: 2017

    Journal: ACS Appl. Mater. Interfaces, Volume 9, nov-08, page 8194–8200

    Authors: Li, Yuzhi; Lan, Linfeng; Sun, Sheng; Lin, Zhenguo; Gao, Peixiong; Song, Wei; Song, Erlong; Zhang, Peng; Peng, Junbiao

    Organizations: National Key Research and Development Program of Strategic Advanced Electronic Materials [2016YFB0401105]; National Natural Science Foundation of China [51673068, 61204087, 51173049]; Pearl River S&T Nova Program of Guangzhou [2014J2200053]; Guangdong Province Science and Technology Plan [2014B010105008, 2014B090916002, 2015B090914003, 2016B090906002]

    Keywords: inkjet printing; metal oxide; thin-film transistors; surface-energy patterns; Cytop

    An array of inkjet-printed metal-oxide thin-film transistors (TFTs) is demonstrated for the first time with the assistance of surface-energy patterns prepared by printing pure solvent to etch the ultrathin hydrophobic layer. The surface energy patterns not only restrained the spreading of inks but also provided a facile way to regulate the morphology of metal oxide films without optimizing ink formulation. The fully printed InGaO TFT devices in the array exhibited excellent electron transport characteristics with a maximum mobility of 11.7 cm(2) V-1 s(-1), negligible hysteresis, good uniformity, and good stability under bias stress. The new route lights a general way toward fully inkjet-printed metal-oxide TFT arrays.
    View publication