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    Amphiphilic Poly(3-hexylthiophene)-Based Semiconducting Copolymers for Printing of Polyelectrolyte-Gated Organic Field-Effect Transistors

    Year: 2013

    Journal: Macromolecules, 2013, 46 (11), pp 4548–4557, 20131119

    Authors: Ari Laiho, Ha Tran Nguyen, Hiam Sinno, Isak Engquist, Magnus Berggren, Philippe Dubois, Olivier Coulembier, Xavier Crispin

    Organizations: Department of Science and Technology, Organic Electronics, Linköping University, SE-601 74 Norrköping, Sweden, Laboratory of Polymeric and Composite Materials, Center of Innovation and Research in Materials and Polymers (CIRMAP), University of MonsUMONS, Place du Parc 23, 7000 Mons, Belgium

    Polyelectrolytes are promising electronically insulating layers for lowvoltageorganic field effect transistors. However, the polyelectrolyte−semiconductorinterface is difficult to manufacture due to challenges in wettability. We introduce anamphiphilic semiconducting copolymer which, when spread as a thin film, can changeits surface from hydrophobic to hydrophilic upon exposure to water. This peculiarwettability is exploited in the fabrication of polyelectrolyte-gated field-effect transistorsoperating below 0.5 V. The prepared amphiphilic semiconducting copolymer is basedon a hydrophobic regioregular poly(3-hexylthiophene) (P3HT) covalently linked to ahydrophilic poly(sulfonated)-based random block. Such a copolymer is obtained in athree-step strategy combining Grignard metathesis (GRIM), atom transfer radicalpolymerization (ATRP) processes, and a postmodification method. The structure ofthe diblock copolymer was characterized using FT-IR, 1H NMR spectroscopy, and gelpermeation chromatography (GPC).