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    Amphiphilic semiconducting copolymer as compatibility layer for printing polyelectrolyte-gated OFETs

    Year: 2013

    Journal: Organic Electronics, 14, pp 790-796, 20130926

    Authors: Hiam Sinno, Ha Tran Nguyen, Anders Hägerström, Mats Fahlman, Linda Lindell, Olivier Coulembier, Philippe Dubois, Xavier Crispin, Isak Engquist, Magnus Berggren

    Organizations: Department of Science and Technology, Organic Electronics, Linköping University, SE-601 74 Norrköping, Sweden, Laboratory of Polymeric and Composite Materials, Center of Innovation and Research in Materials and Polymers (CIRMAP), University of Mons-UMONS, Place du Parc 23, 7000 Mons, Belgium, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden

    We report a method for inkjet-printing an organic semiconductor layer on top of the electrolyteinsulator layer in polyelectrolyte-gated OFETs by using a surface modification treatmentto overcome the underlying wettability problem at this interface. The methodincludes depositing an amphiphilic diblock copolymer (P3HT-b-PDMAEMA). This materialis designed to have one set of blocks that mimics the hydrophobic properties of the semiconductor(poly(3-hexylthiophene) or P3HT), while the other set of blocks include polarcomponents that improve adhesion to the polyelectrolyte insulator. Contact angle measurements,atomic force microscopy, and X-ray photoelectron spectroscopy confirm formationof the desired surface modification film. Successful inkjet printing of a smoothsemiconductor layer allows us to manufacture complete transistor structures that exhibitlow-voltage operation in the range of 1 V.