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Anisotropic Polymerization of a Long-Chain Diacetylene Derivative Langmuir-Blodgett Film on a Step-Bunched SiO2/Si Surface

Year: 2006

Journal: Langmuir, 2006, 22 (13), pp 5742–5747, 20111221

Authors: Ryo Onoki, Keiji Ueno, Hiroo Nakahara, Genki Yoshikawa, Susumu Ikeda, Shiro Entani, Tetsuhiko Miyadera, Ikuyo Nakai, Hiroshi Kondoh, Toshiaki Ohta, Manabu Kiguchi, and Koichiro Saiki

Organizations: Department of Chemistry, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan, Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan, Department of Complexity Science and Engineering, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan, and Department of Chemistry, Hokkaido University, N10W8 Kita-ku, Sapporo, Hokkaido 060-0812, Japan

Alternating facet/terrace nanostructures were fabricated on a SiO2 surface by step-bunching and thermal oxidation of a vicinal Si(111) substrate, and their influence upon the polymerization direction of a long-chain diacetylene derivative monolayer film was investigated by angle-dependent polarized near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. It was found that the peak intensity of the C 1s−π* transition was stronger when the electric vector plane of the incident X-ray was parallel to the direction of the periodic facet/terrace structures rather than perpendicular to them. On the contrary, a polymer film fabricated on a flat SiO2 surface showed no in-plane anisotropy of the peak intensity. These results indicate that the diacetylene groups in the diacetylene derivative monolayer are preferentially photopolymerized in the direction not across but along the periodic one-dimensional structures on the step-bunched and thermally oxidized SiO2/Si(111) surface.