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    Fabrication of Graphene Nanomesh by Using an Anodic Aluminum Oxide Membrane as a Template

    Year: 2012

    Journal: Adv. Mater., 2012, 24 (30), 4138-4142, 20131009

    Authors: Zhiyuan Zeng, Xiao Huang, Zongyou Yin, Hong Li, Yang Chen, Hai Li, Qing Zhang, Jan Ma, Freddy Boey, Hua Zhang

    Organizations: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore; Microelecronics Center, School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

    Large-area graphene nanomesh (GNM) is prepared using a new and effective method, in which the O2 plasma treatment is used with an anodic aluminum oxide (AAO) membrane as an etch mask. By varying the pore size and cell wall thickness of the AAO membrane, GNM with tunable pore size and neck width can be prepared. As proof of concept, a field-effect transistor with 15 nm neck width GNM as the conductive channel is fabricated, which exhibits p-type semiconducting behavior.