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Heterogeneous Nucleation Promotes Carrier Transport in Solution-Processed Organic Field-Effect Transistors

Year: 2013

Journal: Advanced Functional Materials Volume 22, Issue 23, pages 4891–4898, December 5, 2012, 20130324

Authors: Ruipeng Li 1, Hadayat Ullah Khan 1, Marcia M. Payne 3, Detlef-M. Smilgies 2, John E. Anthony 3, Aram Amassian 1,*

Last authors: Aram Amassian

Organizations: 1 
Materials Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia . 2 
Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY 14850, USA . 3 
Department of Chemistry, University of Kentucky, Lexington, KY 40506, USA

Country: Saudi Arabia, USA, US, United States, United States of America, America

A new way to investigate and control the growth of solution-cast thin films is presented. The combination of in situ quartz crystal microbalance measurements with dissipation capabilities (QCM-D) and in situ grazing-incidence wide-angle X-ray scattering (GIWAXS) in an environmental chamber provides unique quantitative insights into the time-evolution of the concentration of the solution, the onset of nucleation, and the mode of growth of the organic semiconductor under varied drying conditions. It is demonstrated that careful control over the kinetics of solution drying enhances carrier transport significantly by promoting phase transformation predominantly via heterogeneous nucleation and sustained surface growth of a highly lamellar structure at the solid-liquid interface at the expense of homogeneous nucleation.