Contact
    Start Publications Hysteresis loop and cross-talk of organic memristive devices
    ←  Publication Finder
    KSV NIMA

    Hysteresis loop and cross-talk of organic memristive devices

    Year: 2014

    Journal: MICROELECTRONICS JOURNAL, Vol. 45, p 1396-1400, 20150722

    Authors: Dimonte, Alice; Berzina, Tatiana; Pavesi, Maura; Erokhin, Victor

    Organizations: CNR IMEM, Parma, Italy; Univ Parma, Dept Phys & Earth Sci, I-43100 Parma, Italy

    Similarly to inorganic memristors, the organic memristive devices reveal a variation of the hysteresis loop upon the frequency of the applied bias voltage. The on/off ratio of the conductivity increases from 4 to 1000 Limes for the variation of time delay (equilibration after the application of the voltage increment) from 5 to 60 s. Being implemented in multi-element electrical circuits memristive devices provide a cross-talk, leading to an equilibration trend of the conductivity values. This effect is mainly related to the formation of stable signal pathways. (C) 2014 Elsevier Ltd. All rights reserved.