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    Influence of dipping cycles on physical, optical, and electrical properties of Cu2NiSnS4: Direct solution dip coating for photovoltaic applications

    Year: 2017

    Journal: J. Alloy. Compd., Volume 725, NOV 25, page 510–518

    Authors: Mokurala, Krishnaiah; Mallick, Sudhanshu; Bhargava, Parag; Siol, Sebastian; Klein, Talysa R.; van Hest, Maikel F. A. M.

    Organizations: Solar Energy Research Institute for India and the U.S. (SERIIUS) - U.S. Department of Energy (Office of Science) [DE AC36-08G028308]; Solar Energy Research Institute for India and the U.S. (SERIIUS) - U.S. Department of Energy (Office of Basic Energy Sciences) [DE AC36-08G028308]; Solar Energy Research Institute for India and the U.S. (SERIIUS) - U.S. Department of Energy (Energy Efficiency and Renewable Energy, Solar Energy Technology Program) [DE AC36-08G028308]; Solar Energy Research Institute for India and the U.S. (SERIIUS) - U.S. Department of Energy (Office of International Affairs) [DE AC36-08G028308]; Government of India [IUSSTF/JCERDC-SERIIUS/2012]; MAGEEP - SERIIUS visiting scholars program

    Keywords: Dip coating; Dipping cycles; Cu2NiSnS4; Annealing; Optoelectronic properties; Photo response

    Direct solution coating technique has emerged as a promising economically viable process for earth abundant chalcogenide absorber materials for photovoltaic applications. Here, direct ethanol based dip coating of earth abundant Cu2NiSnS4 (CNTS) films on soda lime glass (SLG), molybdenum coated glass (Mo), and fluorine doped tin oxide coated glass (FTO) substrates is investigated. The structural and morphological properties of pre-annealed and sulfurized CNTS films coated on SLG, FTO, and Mo substrates are reported. The influence of dipping cycles on composition and optoelectronic properties of preannealed and sulfurized CNTS films deposited on SLG substrate is presented. Energy dispersive spectroscopy (EDS) and X-ray fluorescence (XRF) analysis reveal how changes in thickness and elemental composition affect morphology and optoelectronic properties. The obtained absorption coefficient, optical bandgap, resistivity and mobility of pre -annealed and sulfurized films are found to be 104 cm(-1), 1.5 eV, 0.48 cm, 3.4 cm(2)/Vs and 104 cm(-1), 1.29 eV, 0.14 Omega cm, 11.0 cm(2)/Vs, respectively. These properties are well suited for photovoltaic applications and lead to the conclusion that the direct ethanol based dip coating can be an alternative economically viable process for the fabrication of earth abundant CNTS absorber layers for thin film solar cells. (C) 2017 Elsevier B.V. All rights reserved.
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