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    Investigation of physicochemical and tribological properties of transparent oxide semiconducting thin films based on Ti-V oxides

    Year: 2013

    Journal: Materials Science-Poland, August 2013, Volume 31, Issue 3, pp 434-445, 20131119

    Authors: M. Mazur 1, K. Sieradzka 1, D. Kaczmarek 1, J. Domaradzki 1, D. Wojcieszak 1, P. Domanowski 2

    Organizations: 1. Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland, 2. Faculty of Mechanical Engineering, University of Technology and Life Sciences in Bydgoszcz, Kaliskiego 7, 85-796, Bydgoszcz, Poland

    In this paper investigations of structural and optical properties of nanocrystalline Ti-V oxide thin films are described. The films were deposited onto Corning 7059 glass using a modified reactive magnetron sputtering method. Structural investigations of prepared Ti-V oxides with vanadium addition of 19 at. % revealed amorphous structure, while incorporation of 21 and 23 at. % of vanadium resulted in V2O5 formation with crystallites sizes of 12.7 and 32.4 nm, respectively. All prepared thin films belong to transparent oxide semiconductors due to their high transmission level of ca. 60–75 % in the visible light range, and resistivity in the range of 3.3·102–1.4·105 Ωcm. Additionally, wettability and hardness tests were performed in order to evaluate the usefulness of the films for functional coatings.