Large-Yield Preparation of High-Electronic-Quality

Graphene was discovered less than five years ago and proved
the existence of pure two-dimensional systems, thought
physically impossible in the past. It appeared very quickly that
this exceptional material showed many outstanding properties.
Since electrons and holes in graphene have potential for high
carrier mobilities, this novel material has become an exciting
new playground for physicists; properties such as the halfinteger
quantum Hall effect at room temperature, spin
transport, high elasticity, electromechanical modulation,
and ferromagnetism all contribute to the fame of graphene.
Since the first experiments conducted five years ago on
micromechanically cleaved graphite (the renowned but lowyield
adhesive tape method), the growing appeal of graphene’s
properties has focused much of the research attention towards
the conception of a reliable method for large-scale production. Recent advances using chemical vapor deposition and
successful transfer of the prepared films to arbitrary substrates
brought impressive results in terms of crystalline
quality of the layers and consequent electrical and mechanical
properties. Notwithstanding these results, truly controllable
single- or multilayer large-scale deposition is still a pressing
issue and a method for depositing high-quality graphene at
variable coverage on an arbitrary surface is not yet available.
Moreover, for practical application or simply for fundamental
research purposes, good adhesion of graphene to the substrate
is of great importance.