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    Multi-wavelength enhancement of silicon Raman scattering by nanoscale laser surface ablation

    Year: 2013

    Journal: APPLIED SURFACE SCIENCE, Vol. 284, p 545-548, 20150703

    Authors: Merlen, A.; Sangar, A.; Torchio, P.; Kallepalli, L. N. D.; Grojo, D.; Uteza, O.; Delaporte, P.

    Organizations: Univ Sud Toulon Var, CNRS, UMR 7334, IM2NP, F-83957 La Garde, France; Aix Marseille Univ, CNRS, UMR 7334, IM2NP, F-13397 Marseille 20, France; Aix Marseille Univ, CNRS, UMR 7341, LP3, F-13288 Marseille, France

    In this paper, we produce nanoholes on a silicon surface by laser ablation. Those nanoholes lead to a yield enhancement of light-matter interaction. Performing Raman spectroscopy on silicon, an enhancement of its main Raman mode is observed: it is twice higher with the nanoholes compared to a flat surface. Such a feature appears whatever the excitation wavelength (488, 514.5 and 632.8 nm) and the laser power, revealing a broad band light-matter interaction enhancement. In addition, no change in the position and shape of the main Raman mode of silicon is observed, suggesting that no structural damages are induced by laser ablation. These results clearly demonstrate the potentiality of such nanostructures for the further development of silicon photonics. (C) 2013 Elsevier B. V. All rights reserved.