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    On the Hysteresis Loop of Organic Memristive Device

    Year: 2011

    Journal: BioNanoScience, 2011, 1 (4), 198-201, 20131009

    Authors: Konstantin Gorshkov, Tatiana Berzina

    Organizations: Department of Physics, University of Parma, Viale Usberti 7A, Parma, 43100, Italy; National Research University of Electronic Technology, Bld. 5, Pas. 4806, Zelenograd, Moscow, Russia, 124498; CNR-IMEM, Parco Area delle Scienze 37/A, 43124, Parma, Italy

    Organic memristive device based on polyaniline emeraldine base–polyethylene oxide was fabricated. Cyclic voltage–current characteristics of the device, measured at different acquisition rate, revealed the transformation of the linear behavior at high scanning rate through the curves with the pronounced hysteresis loop at the middle rate values and finally to the characteristics, suitable for the utilization of the device in synapse-mimicking circuits.