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    Ordered and ultrathin reduced graphene oxide LB films as hole injection layers for organic light-emitting diode

    Year: 2014

    Journal: NANOSCALE RESEARCH LETTERS, Vol. 9, p -, 20150722

    Authors: Yang, Yajie; Yang, Xiaojie; Yang, Wenyao; Li, Shibin; Xu, Jianhua; Jiang, Yadong

    Organizations: Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

    In this paper, we demonstrated the utilization of reduced graphene oxide (RGO) Langmuir-Blodgett (LB) films as high performance hole injection layer in organic light-emitting diode (OLED). By using LB technique, the well-ordered and thickness-controlled RGO sheets are incorporated between the organic active layer and the transparent conducting indium tin oxide (ITO), leading to an increase of recombination between electrons and holes. Due to the dramatic increase of hole carrier injection efficiency in RGO LB layer, the device luminance performance is greatly enhanced comparable to devices fabricated with spin-coating RGO and a commercial conducting polymer PEDOT:PSS as the hole transport layer. Furthermore, our results indicate that RGO LB films could be an excellent alternative to commercial PEDOT:PSS as the effective hole transport and electron blocking layer in light-emitting diode devices.