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    The gas sensitivity of a metal-insulator-semiconductor field-effecttransistor based on Langmuir-Blodgett films of a new asymmetrically substituted phthalocyanine

    Year: 2000

    Journal: Thin Solid Films 360 (2000) 256-260, 20111221

    Authors: Wenping Hu, Yunqi Liu, Yu Xu, Shenggao Liu, Shuqin Zhou, Daoben Zhu, Bo Xu, Chunli Bai, Cheng Wang

    Organizations: Center for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, PR China

    Langmuir-Blodgett (LB) films of an amino-tri-tert-butyl-phthalocyanine (AmBuPc) were fabricated as the semiconductor thin layer for a metal-insulator-semiconductor field-effect-transistor (MISFET). The gas sensitivity of the low-conducting LB films MISFET was measured in a NO2 atmosphere at different concentration. The results showed that the gas concentration and the drain-source current of the AmBuPc gas sensor satisfy Langmuir adsorption isotherm.