Contact
    Start Publications ZnO:Al thin films used in ZnO: Al/p-Si heterojunctions
    ←  Publication Finder
    KSV NIMA

    ZnO:Al thin films used in ZnO: Al/p-Si heterojunctions

    Year: 2012

    Journal: J Sol-Gel Sci Technol, 2012, 61 (3), 620-627, 20131009

    Authors: N. Baydogan, O. Karacasu, H. Cimenoglu

    Organizations: Energy Institute, Istanbul Technical University, Maslak, 34469 Istanbul, Turkey; Materials Division, Metallurgical and Materials Engineering Department, Istanbul Technical University, Maslak, 34469 Istanbul, Turkey

    Al-doped n-ZnO/p-Si heterojunctions were fabricated using a sol–gel dip coating technique at 700 °C, in a nitrogen ambient. The structural, optical, and electrical properties of ZnO:Al thin films, and the heterojunction properties of ZnO:Al/p-Si were investigated with respect to the effects of Al doping concentration. Hexagonal nano-structured ZnO: Al thin films with a 1.2% and a 1.6 at.% Al concentration exhibited high optical transmittance in visible ranges. Electrical resistivity changed with respect to Al doping concentration, and minimum resistivity was detected at a 1.2 at.% Al concentration. The ZnO:Al/p-Si heterojunction properties were analysed using current–voltage (I–V) measurements at four different Al concentrations, ranging from 0.8 to 1.6 (at.%). The ZnO:Al/p-Si heterojunctions exhibited diode-like rectifying behaviour. Under UV illumination, the photoelectric behaviour observed for the ZnO:Al/p-Si heterojunctions was diode.