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    Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment

    Year: 2018

    Journal: Nanotechnology, Volume 29, MAY 11

    Authors: Shin, Jeong Woo; Kang, Myung Hoon; Oh, Seongkook; Yang, Byung Chan; Seong, Kwonil; Ahn, Hyo-Sok; Lee, Tae Hoon; An, Jihwan

    Organizations: National Research Foundation under the Ministry of Education, Korea [NRF-2015R1D1A1A01058963]; Ministry of Trade, Industry and Energy (MOTIE), KOREA, through the Education Support program for Creative and Industrial Convergence [N0000717]; Nano.Material Technology Development program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [2009-0082580]; Kwangwoon University; National Research Foundation of Korea (NRF) - Korea government (MSIP) [2016R1C1B1014935]

    Keywords: atmospheric plasma; atomic layer deposition; graphene; graphene field effect transistor; high-k dielectric

    Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 degrees C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.
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