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    Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

    Year: 2021

    Journal: Micromachines, Volume 12, FEB

    Authors: Yao, Rihui; Fu, Xiao; Li, Wanwan; Zhou, Shangxiong; Ning, Honglong; Tang, Biao; Wei, Jinglin; Cao, Xiuhua; Xu, Wei; Peng, Junbiao

    Organizations: Key-Area Research and Development Program of Guangdong Province [2020B010183002]; NationalNatural Science Foundation ofChina [51771074, 62074059, 22090024]; GuangdongMajor Project of Basic and Applied Basic Research [2019B030302007]; Fundamental Research Funds for the Central Universities [2020ZYGXZR060, 2019MS012]; Ji Hua Laboratory scientific research project [X190221TF191]; South China University of Technology 100 Step Ladder Climbing Plan Research Project [j2tw202004035, j2tw202004034, j2tw202004095]; National College Students' Innovation and Entrepreneurship Training Program [202010561001, 202010561004, 202010561009]; 2020 Guangdong University Student Science and Technology Innovation Special Fund (Climbing Plan Special Fund)

    Keywords: indium oxide thin film; solution method; plasma surface treatment; annealing temperature; bias stability

    In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 degrees C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 degrees C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm(2)center dot V-1 center dot s(-1), I-on/I-off of 5.93 x 10(6), and SS of 0.84 V center dot dec(-1)). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.
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