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    Decoration of Vertically Aligned Carbon Nanotubes with Semiconductor Nanoparticles Using Atomic Layer Deposition

    Year: 2019

    Journal: Materials, Volume 12, 1-Apr

    Authors: Szabo, Anna; Bakos, Laszlo Peter; Karajz, Daniel; Gyulavari, Tamas; Toth, Zsejke-Reka; Pap, Zsolt; Szilagyi, Imre Miklos; Igricz, Tamas; Parditka, Bence; Erdelyi, Zoltan; Hernadi, Klara

    Organizations: NRDI [OTKA NN114463, NRDI K 124212]; European UnionEuropean Union (EU) [TNN_16 123631, K 112644, GINOP-2.3.2-15-2016-00041, GINOP-2.2.1-15-2017-00084]; State of Hungary - European Regional Development Fund; Higher Education Excellence Program of the Ministry of Human Capacities in the frame of Nanotechnology and Materials Science research area of Budapest University of Technology; Janos Bolyai Research Fellowship of the Hungarian Academy of SciencesHungarian Academy of Sciences [UNKP-18-4-BME-238]; New National Excellence Program of the Ministry of Human Capacities, Hungary

    Keywords: vertically aligned carbon nanotubes; atomic layer deposition; semiconductor particles; semiconductor; CNT forest nanocomposites

    Vertically aligned carbon nanotubes (VACNTs or CNT forest) were decorated with semiconductor particles (TiO2 and ZnO) by atomic layer deposition (ALD). Both the structure and morphology of the components were systematically studied using scanning (SEM) and high resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy, and X-ray diffraction (XRD) methods. Characterization results revealed that the decoration was successful in the whole bulk of VACNTs. The effect of a follow-up heat treatment was also investigated and its effect on the structure was proved. It was attested that atomic layer deposition is a suitable technique for the fabrication of semiconductor/vertically aligned carbon nanotubes composites. Regarding their technological importance, we hope that semiconductor/CNT forest nanocomposites find potential application in the near future.
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