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    Fabrication of high-performance solution processed thin film transistors by introducing a buffer layer

    Year: 2020

    Journal: Appl. Surf. Sci., Volume 504, FEB 28

    Authors: Ning, Honglong; Zhou, Shangxiong; Cai, Wei; Zhu, Zhennan; Tao, Ruiqiang; Yao, Rihui; Wang, Yiping; Fang, Zhiqiang; Zhou, Zhongwei; Peng, Junbiao

    Organizations: National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [51771074, 51521002, U1601651]; National Key R&D Program of China [2016YFB0401504, 2016YFF0203600]; National Key Basic Research and Development Program of China (973 program)National Basic Research Program of China [2015CB655004]; Guangdong Natural Science FoundationNational Natural Science Foundation of Guangdong Province [2016A030313459, 2017A030310028]; Guangdong Science and Technology Project [2016B090907001, 2016A040403037, 2016B090906002, 2017B090907016, 2017A050503002]; Guangzhou Science and Technology Project [201804020033]

    Keywords: Solution process; Thin-film transistors; Buffer layer

    In this paper, high quality ZrO2 and In2O3 films were prepared by solution method. Based on the solution-processed ZrO2 dielectric and In2O3 semiconductor layer, bottom-gate top-contact thin-film transistors (TFTs) were integrated. XPS depth profile was carried out to investigate the intersecting region between ZrO2 insulator and In2O3 active layer due to the diffusion of the subsequent precursor solution, and the effect of intersecting region on the electrical performance of TFTs was discussed. In order to narrow the intersecting region, a simple way that introducing a buffer layer between the active layer and the insulating layer was proposed. The effect of buffer layer was investigated by the multifactor analysis on Minicab software and the result indicated that the buffer layer can effectively improve the performance of TFTs. Finally, high-performance solution processed Thin Film Transistor was fabricated with 0.05 M buffer layer solution and 0.10 M active layer solution. Compared with the TFT without buffer layer, the mobility of TFT with buffer layer increased from 4.35 to 43.94 cm(2)/Vs, and the I-on/I-off increased from 1.87 x 10(5) to 3.90 x 10(6).
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