Start Publications Facile fabrication of ultra-large graphene film with high ...
Attension

Facile fabrication of ultra-large graphene film with high photothermal effect and thermal conductivity

Year: 2021

Journal: Appl. Surf. Sci., Volume 563, OCT 15

Authors: Cai, Chenglong; Wang, Ting; Zhang, Yixin; He, Nongyue

Organizations: National Natural Science Foundation of China [11204033]; CMA L'OREAL CHINA SKIN GRANT 2015 [S2015121421]; Open Research Fund of State Key Laboratory of Natural Medicines, China Pharmaceutical University [SKLNMKF201803]; Southeast University Institution Basal Research Fund

Keywords: Graphene film; Langmuir Blodgett; Thermal conductivity; Photothermal effect; Self-assembled monolayers

A macro-scopic ensembles of graphene was considered to be very important for their extensive use. A macroscopic ensembles of graphene was considered to be very important for their extensive use. Such as electromagnetic-interference shielding, thermal control and sensor. In this work, we developed a facile one-step strategy for ultra-large neat graphene oxide (UN-GO) film with excellent thermal conduction and photothermal conversion property. A Langmuir Blodgett was used as the reactor for self-assembling aqueous graphite oxide (GO) suspensions onto the glass slice to form UN-GO film. The wrinkling density and degree of the close-packed flat UN-GO monolayer were determined by the size of GO sheets. The defect on UN-GO film 2D structure determined the thermal conductivities of the close-packed flat UN-GO. To avoid defect on UN-GO film 2D structure, we modified the substrate with different concentration of (3-aminopropyl) triethoxysilane (APTEs). The internal structure of self-assembled monolayers (SAMs) of APTES fabricated on a glass substrate determined the defect of UN-GO film. Flat APTES-SAMs with integrated molecular structure was a determinant for UN-GO film to form 2D structure with rare defect. Graphene on the top of the substrate was 4 layers. With rare detect on 2D structure, thermal conductivity of GO film reached at 2514 W m-1 K-1. One-step process will be with a high potential for large scale production.