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    Instability of Polystyrene Film and Thermal Behaviors Mediated by Unfavorable Silicon Oxide Interlayer

    Year: 2019

    Journal: Macromolecules, Volume 52, OCT 8, page 7524–7530

    Authors: Lee, Seungjae; Lee, Wooseop; Yamada, Norifumi L.; Tanaka, Keiji; Kim, Jong Hak; Lee, Hoyeon; Ryu, Du Yeol

    Organizations: NRF - Ministry of Science, ICT & Future Planning (MSIP) [2017R1A2A2A05001048, 2017R1A4A1014569]; Korea Institute of Energy Technology Evaluation and Planning (KETEP) [20163030013960]; Ministry of Trade, Industry & Energy (MOTIE), Korea; [2018A0216]

    Instability, glass transition temperature (T-g), and thermal expansion of polystyrene (PS) films are evaluated with respect to the thickness of a silicon oxide (SiOx) interlayer that mediates favorable long-range interaction from the non-oxide Si substrate. Taking into account that a SiOx interlayer is less favorable with an overlying PS film, we designed a systematic set of H-passivated (H-Si), native SiOx (N-Si), and non-native SiOx interlayer (P-Si) substrates. Here, P-Si denotes a substrate prepared by a plasma surface activation with oxygen to create an effective minimum SiOx thickness (similar to 9 nm) that is sufficient for the instability of PS films. The wetting-dewetting behavior differs in 100 and 43 kg/mol PS films supported on the three different substrates. Reflected in T-g and thermal expansion coefficient at the rubbery state for the overlying PS films, P-Si is found to be enough to promote the nontrivial instability of the films, leading to a marked decrease in T-g and increase in alpha(r) with decreasing film thickness (more than those on N-Si). Our results demonstrate the ability to use P-Si to effectively modulate favorable long-range interaction from the Si substrate better than a typical N-Si does.
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