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    Nitrogen passivation formation on Cu surface by Ar-N-2 plasma for Cu-to-Cu wafer stacking application

    Year: 2019

    Journal: Microsyst. Technol., Volume 25, OCT, page 3847–3855

    Authors: Park, Haesung; Kim, Sarah Eunkyung

    Organizations: Basic Science Research Program through the National Research Foundation of Korea (NSF) - Ministry of Science and ICT [NRF-2018R1A2B6003921]

    Wafer stacking technology provides reduced interconnect delay, improved bandwidth, reduced form factor, and decreased cost. Solder-based metallic die bonding is presently utilized in high-volume manufacturing, but Cu-based metallic wafer bonding is quickly becoming a key bonding technique for next generation 3D IC and heterogeneous stacking applications. In this study, Ar-N-2 plasma treatment on Cu surface was investigated to passivate Cu surface with nitrogen and to enhance the bonding quality of Cu-to-Cu wafer bonding. The Ar-N-2 plasma treatment was performed by conventional DC sputtering under 5 mTorr working pressure with different Ar-N-2 partial pressures. Then, the effect of Ar-N-2 plasma treatment on Cu surface was evaluated structurally and electrically. It was observed that the Ar-N-2 plasma treatment with high nitrogen partial pressure over a sufficient plasma treatment time provided activated Cu surface, reduction of copper oxide and chemisorbed nitrogen, and copper nitride passivation. The Ar-N-2 plasma treatment of Cu surface was found to be a potential pretreatment method for Cu-to-Cu bonding.
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