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    Strong Polarity Asymmetry and Abnormal Mechanical Electroresistance Effect in the Organic Monolayer Tunnel Junction

    Year: 2019

    Journal: ACS Appl. Electron. Mater., Volume 1, JUL, page 1084–1090

    Authors: Jiang, Gelei; Chen, Yun; Ji, Ye; Chen, Weijin; Zhang, Xiaoyue; Zheng, Yue

    Organizations: NSFCNational Natural Science Foundation of China [11602310, 11672339]; Guangzhou science and technology project [201707020002]; Fundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central Universities; National Key Basic Research Program of ChinaNational Basic Research Program of China [2015CB351905]; Special Program for Applied Research on Super Computation of the NSFC Guangdong Joint Fund; Fok Ying Tung FoundationFok Ying Tung Education Foundation; Guangdong Natural Science Funds for Distinguished Young Scholar; China Scholarship CouncilChina Scholarship Council

    Keywords: tunnel junction; P(VDF-TrFE); polarity asymmetry; mechanical electroresistance effect; Langmuir-Blodgett technique; atomic force microscopy

    The performance of organic polar tunnel junctions under external electrical/mechanical stimuli is crucial for their great promise in developing flexible and high-performance sensor and memristive devices. Here, we prepared a single P(VDF-TrFE) monolayer on an Au(111) atomic-level surface by using a Langmuir-Blodgett (LB) technique. The polarity stability and electronic transport behavior of the monolayer were investigated via piezoresponse force microscopy (PFM) and conductive atomic force microscopy (c-AFM) measurements. We observed a strong polarity asymmetry in the P(VDF-TrFE) monolayer tunnel junction. Electrical bias and mechanical force exerted by the tip both can switch the monolayer from the metastable state ("H-Au" state, down polarity) to the stable state ("F-Au" state, up polarity). Moreover, the conductance of the monolayer tunnel junction can be controlled not only by the electrical bias but also by the tip force. Interestingly, a decrease of conductance from the ON state to OFF state is caused by the tip force, which is against our common sense that the larger the tip force, the larger the tunnel conductance. This abnormal mechanical electroresistance effect is attributed to the strong asymmetric interfacial barriers and is useful for the design of novel mechanical sensor and memristive devices.
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