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    Substrate-Dependent Area-Selective Atomic Layer Deposition of Noble Metals from Metal beta-Diketonate Precursors

    Journal: Chem. Mat.

    Authors: Zhang, Chao; Tois, Eva; Leskelae, Markku; Ritala, Mikko

    Organizations: ASM Microchemistry; Academy of Finland [309552]; China Scholarship Council [201507040043]; Academy of Finland (AKA) [309552] Funding Source: Academy of Finland (AKA)

    Area-selective ALD of Ir, Ru, and Rh with excellent substrate selectivity was achieved by using metal beta-diketonates, i.e., Ir(acac)(3), Ru(thd)(3), and Rh(acac)(3), as precursors with either O-2 or air as a coreactant. Native SiO2 and Ru were identified as growth surfaces while low-k SiOC, native oxide terminated Cu and Co, Al2O3, ZrO2, and HfO2 were identified as the nongrowth surfaces. UV (254 nm) irradiation in air was proven efficient to activate the low-k SiOC surface for the noble metal growth. UV exposure of 1 min was sufficient for the growth activation yet without causing any damage to the low-k material. Selective growth of the noble metals was successfully demonstrated on a UV-irradiated test chip that has micro-and nanometer-scale low-k SiOC/Cu patterns. At the optimal selective deposition temperatures, that is 225 & DEG;C for the Ir, 300 & DEG;C for the Ru, and 250 & DEG;C for the Rh, films with a thickness of at least 10 nm for Ir and & SIM;30 nm for Ru and Rh can be selectively deposited on the UV-activated low-k SiOC regions, while no growth occurs on Cu regions, as characterized by SEM, TEM, and EDS.
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