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    Successive Ionic Layer Adsorption and Reaction-Deposited Transparent Cu-Zn-S Nanocomposites as Hole Transport Materials in CdTe Photovoltaics

    Year: 2020

    Journal: Energy Technol., Volume 8, OCT

    Authors: Bastola, E; Subedi, KK; Alfadhili, FK; Phillips, AB; Heben, MJ; Ellingson, RJ

    Organizations: Air Force Research Laboratory [FA9453-11-C-0253, FA9453-18-2-0037]

    Keywords: cadmium telluride; composition controls; interfaces; solar cells; successive ionic layer adsorption and reactions

    Evolving material science and device architectures continue to drive improvements in photovoltaic solar cell performance. Herein, the synthesis and application of p-type transparent copper-zinc-sulfide (Cu-Zn-S) nanocomposite thin films for application as a semi-transparent back buffer layer for cadmium telluride (CdTe) photovoltaics is reported. Earth-abundant and low-toxicity Cu-Zn-S films are prepared at room temperature using successive ionic layer adsorption and reaction (SILAR). Transparency in the range of 500-800 nm, low resistivity, and composition-controlled bandgap energy offer a compelling material system for high performance as an electron reflector enabling bifacial cell design. Implementing the Cu-Zn-S hole transport material (HTM) at the CdTe back contact, without intentional introduction of Cu doping, converts simulated AM1.5 sunlight to electricity at an efficiency up to 13.2%, with an average device performance of 13.0%. Intentional Cu doping yields a best efficiency of 14.3% with open-circuit voltage (V-OC) of 848 mV and fill factor (FF) of 77.3% (average 14.1%). Our study shows the clear promise of this material for highly efficient and semi-transparent back contact to CdTe solar cells.
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