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    Synthesis of dimethyl- and diphenylsilane-based oligo(azine)s: Thermal, optical, electronic, and morphological properties

    Year: 2022

    Journal: J. Appl. Polym. Sci., Volume 139, OCT 10

    Authors: Sobarzo, Patricio A.; Jessop, Ignacio A.; Perez, Yasmin; Hauyon, Rene A.; Velazquez-Tundidor, Maria V.; Medina, Jean; Gonzalez, Alexis; Garcia, Luis E.; Gonzalez-Henriquez, Carmen M.; Coll, Deysma; Ortiz, Pablo A.; Tundidor-Camba, Alain; Terraza, Claudio A.

    Organizations: Agencia Nacional de Investigacion y Desarrollo [1200329, 11180088, 21151317, 21180524]; Fondequip [EQM120021]

    Keywords: optical and photovoltaic applications; optical properties; polycondensation

    Four new oligo(azine)s were synthesized from dimethyldiphenylsilane and tetraphenylsilane core-based dialdehydes and hydrazine by high-temperature polycondesation and proposed as materials for optoelectronic applications. The oligo(azine)s were characterized by EA, FT-IR, and NMR. Although most of samples were poorly soluble, TPS-containing PAZ-4 was soluble in aprotic polar solvents. According to SEC and FT-IR studies, the samples were oligomers with up to five repeating units long. TGA showed highly stable samples with TDT10% over 420 degrees C except for PAZ-1 that contains a DMS core along with phenyl units, and thus, the lowest carbon content in the series. From DSC analysis, the substitution of phenyl groups in PAZ-1/3 by biphenyl moieties in PAZ-2/4 allowed to obtain oligo(azine)s with lower T-g values. PAZ-4 showed a UV-A absorption with optical band-gap values of 2.91 and 2.65 eV from UV-vis (solution) and DRS (films), respectively. PL analysis showed a violet emission. PAZ-4 showed resistivity of 29.24 omega cm, similar to wide-band gap materials. Their contact angle measurements showed a critical surface tension of 42.29 dynes/cm, revealing its hydrophobicity. AFM analysis indicated that the PAZ-4 films had homogeneous surfaces. Young's modulus close to 4.46 GPa was established by microindentation for the PAZ-4 thin-films.
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