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    Tailored Langmuir-Schaefer Deposition of Few-Layer MoS2 Nanosheet Films for Electronic Applications

    Year: 2019

    Journal: Langmuir, Volume 35, 1-Jul, page 9802–9808

    Authors: Kalosi, Anna; Demydenko, Maksym; Bodik, Michal; Hagara, Jakub; Kotlar, Mario; Kostiuk, Dmytro; Halahovets, Yuriy; Vegso, Karol; Roldan, Alicia Marin; Maurya, Gulab Singh; Angus, Michal; Veis, Pavel; Jergel, Matej; Majkova, Eva; Siffalovic, Peter

    Organizations: Scientific Grant Agency of the Slovak Republic [VEGA 2/0092/18, VEGA-1/0903/17]; Research & Development Operational Program - ERDF [26240220088]; [APVV-15-0641]; [APVV-15-0693]; [APVV-16-0319]; [APVV-17-0560]; [APVV SK-CN-RD-18-0006]

    Few-layer MoS2 films stay at the forefront of current research of two-dimensional materials. At present, continuous MoS2 films are prepared by chemical vapor deposition (CVD) techniques. Herein, we present a cost-effective fabrication of the large-area spatially uniform films of few-layer MoS2 flakes using a modified Langmuir-Schaefer technique. The compression of the liquid-phase exfoliated MoS2 flakes on the water subphase was used to form a continuous layer, which was subsequently transferred onto a submerged substrate by removing the subphase. After vacuum annealing, the electrical sheet resistance dropped to a level of 10 k Omega/sq, being highly competitive with that of CVD-deposited MoS2 nanosheet films. In addition, a consistent fabrication protocol of the large-area conductive MoS2 films was established. The morphology and electrical properties predetermine these films to advanced detecting, sensing, and catalytic applications. A large number of experimental techniques were used to characterize the exfoliated few-layer MoS2 flakes and to elucidate the formation of the few-layer MoS2 Langmuir film.
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