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    Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

    Year: 2020

    Journal: Coatings, Volume 10, MAR

    Authors: Liang, Zhihao; Zhou, Shangxiong; Cai, Wei; Fu, Xiao; Ning, Honglong; Chen, Junlong; Yuan, Weijian; Zhu, Zhennan; Yao, Rihui; Peng, Junbiao

    Organizations: Key-Area Research and Development Program of Guangdong Province [2019B010934001]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [51771074, 61804029, 61574061]; Major Integrated Projects of National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [U1601651]; Basic and Applied Basic Research Major Program of Guangdong Province [2019B030302007]; Guangdong Natural Science FoundationNational Natural Science Foundation of Guangdong Province [2018A030310353]; Science and Technology Project of Guangzhou [201904010344]; Fundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central Universities [2019MS012]; 2019 Guangdong University Student Science and Technology Innovation Special Fund (Climbing Plan Special Fund) [pdjh2019a0028, pdjh2019b0041]; National College Students' Innovation and Entrepreneurship Training Program [201910561005, 201910561007]; South China University of Technology 100 Step Ladder Climbing Plan Research Project [j2tw201902475, j2tw201902203]; Open Project of Guangdong Province Key Lab of Display Material and Technology [2017B030314031]

    Keywords: solution method; zirconium-aluminum-oxide; mixed precursor; high dielectric constant; metal oxide thin-film transistor

    In this paper, zirconium-aluminum-oxide (ZAO) dielectric layers were prepared by a solution method with intent to combine the high dielectric constant with a low leakage current density. As a result, dielectric layers with improved electrical properties as expected can be obtained by spin-coating the mixed precursor. The chemical and physical properties of the films were measured by thermogravimetric differential scanning calorimetry (TG-DSC), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and a UV spectrometer. It is observed that the oxygen defects and the hydroxide in the films are reduced with the addition of high-bond -energy zirconia, while the films can remain large optical bond gaps thanks to the presence of alumina. The metal-insulator-metal (MIM) devices were fabricated, and it was seen that with a molar ratio of Zr:Al = 3:1 and an annealing temperature of 500 C, the dielectric layer afforded the highest dielectric constant of 21.1, as well as a relatively low leakage current of 2.5 x 106 A/cm2 @ 1 MV/cm. Furthermore, the indium-gallium-zinc oxide thin-film transistors (IGZO-TFTs) with an optimal ZAO dielectric layer were prepared by the solution method and a mobility of 14.89 cm2/Vs, and a threshold voltage swing of 0.11 V/dec and a 6.1 x 106 on/off ratio were achieved at an annealing temperature of 500 degrees C.
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